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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION With TO-220Fa package Low saturation voltage Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25ae SYMBOL VCBO VCEO VEBO IC ICM PC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Collector power dissipation Junction temperature Storage temperature TC=25ae Ta=25ae CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 3 6 30 2 150 -55~150 ae ae UNIT V V V A A W W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50|I IE=50|I A , IE=0 A , IC=0 MIN 60 80 5 1.0 1.5 10 10 100 8 70 320 MHz Pf |I |I TYP. MAX UNIT V V V V V A A SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE fT Cob IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2061 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
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